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dgt305se 1/14 www.dynexsemi.com replaces february 2002 version, issue ds5519-2.0 ds5519-3.0 july 2004 features double side cooling high reliability in service high voltage capability fault protection without fuses high surge current capability turn-off capability allows reduction in equipment size and weight. low noise emission reduces acoustic cladding necessary for environmental requirements applications variable speed a.c. motor drive inverters (vsd-ac) uninterruptable power supplies high voltage converters choppers welding induction heating dc/dc converters key parameters i tcm 700a v drm 1800v i t(av) 240a dv d /dt 500v/ s di t /dt 500a/ s voltage ratings 1800 DGT305SE18 conditions type number t vj = 125 o c, i dm = 50ma, i rrm = 50ma, v rg = 2v repetitive peak off-state voltage v drm v repetitive peak reverse voltage v rrm v 16 dgt305se gate turn-off thyristor fig. 1 package outline outline type code: e (see package details for further information) current ratings symbol parameter conditions max. i tcm t hs = 80 o c. double side cooled. half sine 50hz. v d = 67%v drm , t j = 125 o c, di gq /dt =15a/ s, cs = 1.5 f rms on-state current a a a 700 240 373 units repetitive peak controllable on-state current t hs = 80 o c. double side cooled. half sine 50hz. i t(rms) i t(av) mean on-state current
dgt305se 2/14 www.dynexsemi.com conditions 4.0 80000 ka a 2 s surge (non-repetitive) on-state current i 2 t for fusing 10ms half sine. t j = 125 o c 10ms half sine. t j =125 o c di t /dt critical rate of rise of on-state current 500 500 v/ s max. units rate of rise of off-state voltage dv d /dt i tsm symbol parameter i 2 t v d = 67% v drm , i t = 700a, t j = 125 o c, i fg > 20a, rise time < 1.0 s a/ s to 80% v drm ; r gk 1.5 ? , t j = 125 o c gate ratings symbol parameter conditions v units max. 16 10 min. - - - peak reverse gate voltage peak forward gate current average forward gate power peak reverse gate power rate of rise of reverse gate current minimum permissable on time minimum permissable off time 6 50 - 20 10 - - s 40 50 v rgm this value maybe exceeded during turn-off i fgm p fg(av) p rgm di gq /dt t on(min) t off(min) s a/ s kw w a thermal ratings symbol parameter conditions max. min. r th(c-hs) contact thermal resistance r th(j-hs) - -0.20 - 0.018 o c/w per contact cathode side cooled double side cooled units - 0.075 o c/w anode side cooled o c/w 0.12 virtual junction temperature t op /t stg operating junction/storage temperature range - clamping force - 125 6.0 5.0 ?0 kn o c/w clamping force 5.5kn with mounting compound dc thermal resistance - junction to heatsink surface t vj 125 o c o c 400 v peak forward transient voltage during current fall time v dp v d = 67% v drm , i t = 700a, t j = 125 o c, di gq /dt =15a/ s, cs = 1.5 f surge ratings
dgt305se 3/14 www.dynexsemi.com characteristics conditions peak reverse current on-state voltage v tm peak off-state current reverse gate cathode current 50 - turn-on energy gate trigger current delay time rise time fall time gate controlled turn-off time turn-off energy storage time turn-off gate charge total turn-off gate charge - 900 v rgm = 16v, no gate/cathode resistor c i t =600a, v d = 1200v, snubber cap cs = 1.5 f, di gq /dt = 15a/ s r l = (residual inductance 2.75 h) t j = 125 o c unless stated otherwise symbol parameter i dm i rrm v gt gate trigger voltage i gt i rgm e on t d t r e off t gs t gf t gq q gq q gqt min. max. units -2.5v at = v drm , v rg = 2v - 50 ma at v rrm -50ma v d = 24v, i t = 100a, t j = 25 o c - 0.75 v v d = 24v, i t = 100a, t j = 25 o c-1.2a ma mj 160 - v d = 1200v, i t = 600a, i fg = 20a, rise time < 1.0 s r l = (residual inductance 2.75 h) s 1.1 - -2.5 s - 550 mj -12 s s 1.5 - s 13.5 - - 1800 c at 600a peak, i g(on) = 2a d.c. tail time t tail -30 s
dgt305se 4/14 www.dynexsemi.com curves fig.2 gate characteristics fig.4 dependence of i tcm on c s fig.3 maximum (limit) on-state characteristics fig.5 maximum (limit) transient thermal resistance
dgt305se 5/14 www.dynexsemi.com fig.6 surge (non-repetitive) on-state current vs time fig.7 steady state rectangulerwave conduction loss - double side cooled
dgt305se 6/14 www.dynexsemi.com fig.9 turn-on energy vs on-state current fig.10 turn-on energy vs peak forward gate current fig.8 steady state sinusoidal wave conduction loss - double side cooled
dgt305se 7/14 www.dynexsemi.com fig.11 turn-on energy vs on-state current fig.12 turn-on energy vs peak forward gate current fig.13 turn-on energy vs rate of rise of on-state current fig.14 delay time and rise time vs on-state current
dgt305se 8/14 www.dynexsemi.com fig.17 turn-off energy vs rate of rise of reverse gate current fig.18 turn-off energy vs on-state current fig.15 delay time and rise time vs peak forward gate current fig.16 turn-off energy vs on-state current
dgt305se 9/14 www.dynexsemi.com fig.19 turn-off energy vs rate of rise of reverse gate current fig.20 turn-off energy vs on-state current with c s as parameter fig.21 storage time vs on-state current fig.22 storage time vs rate of rise of reverse gate current
dgt305se 10/14 www.dynexsemi.com fig.25 peak reverse gate current vs on-state current fig.26 peak reverse gate current vs rate of rise of reverse gate current fig.23 fall time vs on-state current fig.24 fall time vs rate of rise of reverse gate current
dgt305se 11/14 www.dynexsemi.com fig.27 turn-off gate charge vs on-state current fig.28 turn-off gate charge vs rat of rise of reverse gate current fig.29 dependence of critical dv d /dt on gate-cathode resistance and gate-cathode reverse voltage
dgt305se 12/14 www.dynexsemi.com fig.30 general switching waveforms anode voltage and current v d 0.9v d 0.1v d t d t r t gt i t v dp 0.9i t i tail dv d /dt v d v dm gate voltage and current t gs t gf t w1 v fg i fg 0.1i fg di fg /dt 0.1i gq q gq 0.5i gqm i gqm v rg v (rg)br i g(on) t gq recommended gate conditions: i tcm = 600a i fg = 20a i g(on) = 2a d.c. t w1(min) = 4.5s i gqm = 130a di gq /dt = 15a/s q gq = 900c v rg(min) = 2v v rg(max) = 16v these are recommended dynex semiconductor conditions. other conditions are permitted according to users gate drive specifications.
dgt305se 13/14 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. 2 holes 3.6 0.1 x 2.0 0.1 deep (one in each electrode) 15 14 cathode anode 25nom. 42max 25nom. 3 0 ? 15 ? gate nominal weight: 82g clamping force: 6kn 10% package outline type code: e cathode tab
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 ? dynex semiconductor 2003 technical documentation ? not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com stresses above those listed in this data sheet may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed.

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